MT46V16M16BG-75ZL 데이터 시트보기 (PDF) - Micron Technology

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MT46V16M16BG-75ZL

256Mb: x4, x8, x16 DDR SDRAM

Micron Technology 

CK#

CK

COMMAND

256Mb: x4, x8, x16

DDR SDRAM

Figure 23: Nonconsecutive WRITE to WRITE

T0

T1 T1n T2 T2n T3

T4 T4n T5 T5n

WRITE

NOP

NOP

WRITE

NOP

NOP

ADDRESS

tDQSS (NOM)

DQS

DQ

DM

Bank,

Col b

tDQSS

DI

b

Bank,

Col n

DI

n

DON’T CARE

TRANSITIONING DATA

NOTE:

1. DI b, etc., = data-in for column b, etc.

2. Three subsequent elements of data-in are applied in the programmed order following DI b.

3. Three subsequent elements of data-in are applied in the programmed order following DI n.

4. An uninterrupted burst of 4 is shown.

5. Each WRITE command may be to any bank.

09005aef8076894f

256MBDDRx4x8x16_2.fm - Rev. F 6/03 EN

32

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2003 Micron Technology, Inc.

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