Philips Semiconductors
Silicon diffused power transistors
Product specification
BUT12F; BUT12AF
handbook1, 2h0alfpage
Ptot max
(%)
80
MGK674
40
0
0
50
100 Th (oC) 150
Fig.3 Power derating curve.
10
handbook, halfpage
IC
(A)
5
MGB892
BUT12F
BUT12AF
0
0
400
800 VCE (V) 1200
VBE = −1 to −5 V; Tmb = 100 °C.
Fig.4 Reverse bias SOAR.
handbook, halfpage
+ 50 V
100 to 200 Ω
L
horizontal
oscilloscope
vertical
6V
30 to 60 Hz
300 Ω
1Ω
MGE252
handbookI,Chalfpage
(mA)
250
200
100
0
MGE239
min VCE (V)
VCEOsust
Fig.5 Test circuit for collector-emitter
sustaining voltage.
1997 Aug 13
Fig.6 Oscilloscope display for collector-emitter
sustaining voltage.
5