BUT12AF 데이터 시트보기 (PDF) - Philips Electronics
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BUT12AF Datasheet PDF : 12 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUT12F; BUT12AF
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCEOsust collector-emitter sustaining voltage IC = 100 mA; IBoff = 0; L = 25 mH;
BUT12F
see Figs 5 and 6
400 −
BUT12AF
450 −
VCEsat
collector-emitter saturation voltage
BUT12F
IC = 6 A; IB = 1.2 A; see
Figs 7 and 9
−
−
BUT12AF
IC = 5 A; IB = 1 A; see
Figs 7 and 9
−
−
VBEsat
base-emitter saturation voltage
BUT12F
IC = 6 A; IB = 1.2 A; see Fig.7
−
−
BUT12AF
IC = 5 A; IB = 1 A; see Fig.7
−
−
ICES
collector-emitter cut-off current
VCE = VCESMmax; VBE = 0; note 1 −
−
VCE = VCESMmax; VBE = 0;
Tj = 125 °C; note 1
−
−
IEBO
emitter-base cut-off current
VEB = 9 V; IC = 0
−
−
hFE
DC current gain
VCE = 5 V; IC = 10 mA; see Fig.10 10
18
VCE = 5 V; IC = 1 A; see Fig.10 10
20
Switching times resistive load (see Fig.12)
−
V
−
V
1.5 V
1.5 V
1.5 V
1.5 V
1
mA
3
mA
10
mA
35
35
ton
turn-on time
BUT12F
BUT12AF
ts
storage time
BUT12F
BUT12AF
tf
fall time
BUT12F
BUT12AF
ICon = 6 A; IBon = −IBoff = 1.2 A
−
−
1
µs
ICon = 5 A; IBon = −IBoff = 1 A
−
−
1
µs
ICon = 6 A; IBon = −IBoff = 1.2 A
−
−
4
µs
ICon = 5 A; IBon = −IBoff = 1 A
−
−
4
µs
ICon = 6 A; IBon = −IBoff = 1.2 A
−
−
0.8 µs
ICon = 5 A; IBon = −IBoff = 1 A
−
−
0.8 µs
Switching times inductive load (see Fig.14)
ts
storage time
BUT12F
BUT12AF
tf
fall time
BUT12F
BUT12AF
ICon = 6 A; IBon = 1.2 A;
VCL = 250 V; Tc = 100 °C
ICon = 5 A; IBon = 1 A;
VCL = 300 V; Tc = 100 °C
ICon = 6 A; IBon = 1.2 A;
VCL = 250 V; Tc = 100 °C
ICon = 5 A; IBon = 1 A;
VCL = 300 V; Tc = 100 °C
−
1.9 2.5 µs
−
1.9 2.5 µs
−
200 300 ns
−
200 300 ns
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 13
3
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