2SD970 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SD970

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD970

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;RBE=0

120

V

V(BR)EBO Emitter-base breakdown voltage

IE=50mA ; IC=0

7

V

VCEsat-1 Collector-emitter saturation voltage IC=4A ;IB=8mA

1.5

V

VCEsat-2 Collector-emitter saturation voltage IC=8A ;IB=80mA

3.0

V

VBEsat-1 Base-emitter saturation voltage

IC=4A ;IB=8mA

2.0

V

VBEsat-2 Base-emitter saturation voltage

IC=8A ;IB=80mA

3.5

V

ICBO

Collector cut-off current

VCB=120V; IE=0

100 μA

ICEO

Collector cut-off current

固IN电C半H导AN体GE SEMICONDUTOR hFE

DC current gain

Switching times

ton

Turn-on time

VCE=100V; RBE=∞

IC=4A ; VCE=3V

1000

10

20000

0.4

μA

μs

ts

Storage time

IC=4A ;IB1=-IB2=8mA

5.4

μs

tf

Fall time

1.1

μs

2

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