BB505C 데이터 시트보기 (PDF) - Renesas Electronics
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BB505C Datasheet PDF : 9 Pages
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BB505C
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise; NF = 1.5 dB typ. at f = 900 MHz
• High gain; PG = 24 dB typ. at f = 900 MHz
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 190 V at C = 200 pF, Rs = 0 conditions.
• Provide mini mold packages; CMPAK-4 (SOT-343mod)
Outline
CMPAK-4
REJ03G0364-0100Z
Rev.1.00
Jun.14.2004
Notes:
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
1. Marking is “ES-”.
2. BB505C is individual type number of RENESAS BBFET.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate1 to source voltage
Symbol
VDS
VG1S
Gate2 to source voltage
VG2S
Drain current
Channel power dissipation
ID
Pchnote3
Channel temperature
Tch
Storage temperature
Tstg
Notes: 3. Value on the glass epoxy board (50 mm × 40 mm × 1 mm ).
Ratings
6
+6
–0
+6
–0
20
250
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Rev.1.00, Jun.14.2004, page 1 of 8
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