STP60NF03L 데이터 시트보기 (PDF) - STMicroelectronics

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STP60NF03L

N-CHANNEL 30V / STripFET POWER MOSFET

STMicroelectronics 

STP60NF03L

Electrical characteristics

Table 5. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=60A, VGS=0

ISD=60A,

di/dt = 100A/µs,

VDD=15V, Tj=150°C

(see Figure 14)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min Typ. Max Unit

60 A

240 A

1.5 V

75

ns

100

µC

2.6

A

5/12

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