2SK2901-01L 데이터 시트보기 (PDF) - Fuji Electric
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2SK2901-01L Datasheet PDF : 4 Pages
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2SK2901-01L,S
Characteristics
Power Dissipation
PD=f(Tc)
80
60
40
20
0
0
50
100
Tc [°C]
Typical output characteristics
ID=f(VDS):80µs pulse test,Tc=25°C
100
VGS=20V
10V
80
8V
6V
5.5V
60
150
5V
40
4.5V
20
4.0V
3.5V
0
0
1
2
3
4
5
VDS [V]
Typical forward transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C
102
101
100 100
101
102
ID [A]
FUJI POWER MOSFET
Safe operating area
ID=f(VDS):D=0.01,Tc=25°C
103
102
D.C.
101
100
10-110-1
t
t
D=
T
T
100
101
VDS [V]
t=
1µs
10µs
100µs
1ms
10ms
100ms
102
103
Typical transfer characteristics
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C
100
10
1
0.1 0
2
4
6
8
10
VGS [V]
Typical Drain-Source on-State Resistance
RDS(on)=f(ID):80µs pulse test,Tch=25°C
50
VGS=
3.5V 4.0V
4.5V
5.0V
40
30
5.5V
20
6V
8V
10V
10
20V
00
20
40
60
80
100
ID [A]
2
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