TIP2955
PNP SILICON POWER TRANSISTOR
JANUARY 1972 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
1000
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS638AD
VCE = -4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
100
10
-0·01
-0·1
-1·0
-10
IC - Collector Current - A
Figure 1.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
-100
SAS638AB
tp = 300 µs,
d = 0.1 = 10%
tp = 1 ms,
d = 0.1 = 10%
tp = 10 ms,
-10
d = 0.1 = 10%
DC Operation
-1·0
-0·1
-1·0
-10
-100
VCE - Collector-Emitter Voltage - V
Figure 2.
-1000
PRODUCT INFORMATION
3