N25Q128A13ESEA0F 데이터 시트보기 (PDF) - Micron Technology

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N25Q128A13ESEA0F

128Mb, 3V, Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB Sector Erase

Micron Technology 

128Mb, 3V, Multiple I/O Serial Flash Memory

Memory Organization

Memory Organization

Memory Configuration and Block Diagram

Each page of memory can be individually programmed. Bits are programmed from one

through zero. The device is subsector, sector, or bulk-erasable, but not page-erasable.

Bits are erased from zero through one. The memory is configured as 16,777,216 bytes (8

bits each); 256 sectors (64KB each); 4096 subsectors (4KB each); and 65,536 pages (256

bytes each); and 64 OTP bytes are located outside the main memory array.

Figure 6: Block Diagram

HOLD#

W#/VPP

S#

C

DQ0

DQ1

DQ2

DQ3

Control logic

Address register

and counter

High voltage

generator

64 OTP bytes

I/O shift register

256 byte

data buffer

Status

register

00FFFFFF

PDF: 09005aef845665fe

n25q_128mb_3v_65nm.pdf - Rev. P 06/13 EN

0000000h

00000FFh

256 bytes (page size)

X decoder

12

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© 2012 Micron Technology, Inc. All rights reserved.

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