SI1499DH(2006) 데이터 시트보기 (PDF) - Vishay Semiconductors
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SI1499DH Datasheet PDF : 6 Pages
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TYPICAL CHARACTERISTICS 25 °C, unless noted
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Si1499DH
Vishay Siliconix
5
4
3
Package Limited
2
1
0
0
25 50 75 100 125 150 175
TC - Case Temperature (°C)
Current Derating*
TYPICAL CHARACTERISTICS 25 °C, unless noted
2
*The power dissipation PD is based on TJ(max) = 175 °C, using junc-
tion-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 -4
2
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.0.202
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73338.
Document Number: 73338
S-61963-Rev. C, 09-Oct-06
www.vishay.com
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