BF1202R 데이터 시트보기 (PDF) - NXP Semiconductors.
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BF1202R Datasheet PDF : 15 Pages
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NXP Semiconductors
N-channel dual-gate PoLo MOS-FETs
Product specification
BF1202; BF1202R; BF1202WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VDS
drain-source voltage
ID
drain current
IG1
gate 1 current
IG2
gate 2 current
Ptot
total power dissipation
BF1202; BF1202R
BF1202WR
Tstg
storage temperature
Tj
operating junction temperature
CONDITIONS
Ts 113 C; note 1
Ts 119 C; note 1
Note
1. Ts is the temperature of the soldering point of the source lead.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
BF1202; BF1202R
BF1202WR
MIN.
MAX.
10
30
10
10
UNIT
V
mA
mA
mA
200
mW
200
mW
65
+150
C
150
C
VALUE
185
155
UNIT
K/W
K/W
250
handbook, halfpage
Ptot
(mW)
200
150
100
50
0
0
50
MCD951
(2) (1)
100
150
200
Ts (°C)
(1) BF1202WR.
(2) BF1202; BF1202R.
Fig.4 Power derating curve.
2010 Sep 16
3
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