SI8424CDB-T1-E1(2012) 데이터 시트보기 (PDF) - Vishay Semiconductors
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SI8424CDB-T1-E1 Datasheet PDF : 11 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
1.5
6
4
2
0
0
25
50
75
100 125 150
TA - Ambient Temperature (°C)
Current Derating*
Note:
When Mounted on 1" x 1" FR4 with full Copper.
1.2
0.9
0.6
0.3
0.0
25
Si8424CDB
Vishay Siliconix
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63894
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S12-2181-Rev. A, 10-Sep-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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