SQD50N02-04-GE3 데이터 시트보기 (PDF) - Vishay Semiconductors
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SQD50N02-04-GE3 Datasheet PDF : 7 Pages
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
175
150
VGS = 10 V thru 5 V
125
VGS = 4 V
100
75
50
25
0
0
1.5
VGS = 3 V
3
6
9
12
15
VDS - Drain-to-Source Voltage (V)
Output Characteristics
120
90
60
30
0
0
150
SQD50N02-04
Vishay Siliconix
TC = 25 °C
TC = 125 °C
TC = - 55 °C
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1.2
120
TC = - 55 °C
TC = 25 °C
0.9
90
0.6
TC = 25 °C
0.3
TC = 125 °C
0
TC = - 55 °C
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.015
0.012
0.009
0.006
VGS = 4.5 V
0.003
0
0
VGS = 10 V
20
40
60
80
100
ID - Drain Current (A)
On-Resistance vs. Drain Current
60
TC = 125 °C
30
0
0
12
24
36
48
60
ID - Drain Current (A)
Transconductance
8000
7000
6000
Ciss
5000
4000
3000
2000
Coss
1000
0
0
Crss
5
10
15
20
VDS - Drain-to-Source Voltage (V)
Capacitance
S11-2046-Rev. C, 24-Oct-11
3
Document Number: 64701
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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