MAX8778 데이터 시트보기 (PDF) - Maxim Integrated
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MAX8778 Datasheet PDF : 34 Pages
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Dual Quick-PWM Step-Down Controller
with Low-Power LDO, RTC Regulator
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1, no load on LDO, RTC, OUT1, OUT2, and REF, VIN = 12V, VDD = VCC = VSECFB = 5V, VREFIN2 = 1.0V, BYP =
LDOREFIN = GND, ONLDO = IN, ON1 = ON2 = VCC, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
(Note 3)
PARAMETER
SYMBOL
CONDITIONS
LDO Short-Circuit Current
IILIM(LDO) LDO = GND
LDO Regulation Reduction/
Bypass Switchover Threshold
With respect to the LDO voltage,
falling edge of BYP
LDO Bypass Switchover
Threshold
With respect to the LDO voltage,
rising edge of BYP
LDO Bypass Switchover
Startup Timeout
tBYP Rising edge of BYP to bypass gate pulled low
LDO Bypass Switch Resistance
LDO to BYP, VBYP = 5V (Note 4)
VCC Undervoltage-Lockout
(UVLO) Threshold
Falling edge of VCC,
VUVLO(VCC) PWM disabled below this threshold
Rising edge of VCC
Thermal-Shutdown Threshold
TSHDN Hysteresis = 10°C
3.3V ALWAYS-ON LINEAR REGULATOR (RTC)
RTC Output-Voltage Accuracy
RTC Short-Circuit Current
REFERENCE (REF)
VRTC
IILIM(RTC)
ON1 = ON2 = GND, VIN = 6V to 24V,
0 < IRTC < 5mA
ON1 = ON2 = ONLDO = GND,
VIN = 6V to 24V, 0 < IRTC < 5mA
RTC = GND
Reference Voltage
Reference Load-Regulation Error
VREF
ΔVREF
VCC = 4.5V to 5.5V, IREF = 0
IREF = -20μA to 50μA
REF Lockout Voltage
OUT1 FAULT DETECTION
VREF(UVLO) Rising edge, 350mV (typ) hysteresis
MIN
100
-11.0
3.8
3.23
3.19
5
1.980
-10
TYP
-8.5
-6.5
500
1.2
4.0
4.2
+160
3.33
2.00
1.95
MAX UNITS
260
mA
-6.0
%
%
μs
4.5
Ω
4.3
V
°C
3.43
V
3.47
30
mA
2.020
V
+10
mV
V
OUT1 Overvoltage Trip
Threshold
VOVP(OUT1) With respect to error-comparator threshold
13
16
19
%
OUT1 Overvoltage Fault-
Propagation Delay
OUT1 Undervoltage-Protection
Trip Threshold
OUT1 Output-Undervoltage
Fault-Propagation Delay
PGOOD1 Lower Trip Threshold
PGOOD1 Propagation Delay
PGOOD1 Output Low Voltage
PGOOD1 Leakage Current
tOVP FB1 forced 50mV above trip threshold
VUVP(OUT1) With respect to error-comparator threshold
tUVP
tPGOOD1
IPGOOD1
With respect to error-comparator threshold,
falling edge, hysteresis = 1%
FB1 forced 50mV beyond PGOOD1 trip
threshold, falling edge
VFB1 = 0.56V (PGOOD1 low impedance),
ISINK = 4mA
VFB1 = 0.70V (PGOOD1 high impedance),
PGOOD1 forced to 5.5V, TA = +25°C
10
μs
65
70
75
%
10
μs
-19
-16
-13
%
10
μs
0.3
V
1
μA
4 _______________________________________________________________________________________
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