VS-80EBU02(2011) 데이터 시트보기 (PDF) - Vishay Semiconductors
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VS-80EBU02 Datasheet PDF : 7 Pages
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VS-80EBU02
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
trr
IRRM
Qrr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
IF = 80 A
VR = 160 V
dIF/dt = 200 A/μs
TJ = 125 °C
-
-
-
32
-
52
-
4.4
-
8.8
-
70
-
240
MAX.
35
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal resistance,
junction to case
RthJC
Thermal resistance,
junction to heatsink
RthCS
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style PowerTab®
MIN.
-
-
-
-
1.2
(10)
TYP.
-
MAX.
0.70
0.2
-
-
5.02
0.18
-
2.4
-
(20)
80EBU02
UNITS
K/W
g
oz.
N·m
(lbf · in)
Revision: 15-Jun-11
2
Document Number: 93024
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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