042N03MS 데이터 시트보기 (PDF) - Infineon Technologies
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042N03MS Datasheet PDF : 10 Pages
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13 Avalanche characteristics
I AS=f(t AV); R GS=25 W
parameter: T j(start)
100
25 °C
100 °C
10
125 °C
BSC042N03MS G
14 Typ. gate charge
V GS=f(Q gate); I D=30 A pulsed
parameter: V DD
12
15 V
10
6V
24 V
8
6
4
2
1
1
10
100
tAV [µs]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
1000
0
0
10
20
30
40
50
Qgate [nC]
16 Gate charge waveforms
34
V GS
32
30
28
26
V gs(th)
24
22
20
-60 -20 20
60 100 140 180
Tj [°C]
Q g(th)
Q gs
Rev. 2.1
page 7
Qg
Q sw
Q gd
Q gate
2013-05-17
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