2N4338-E3 데이터 시트보기 (PDF) - Vishay Semiconductors
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2N4338-E3 Datasheet PDF : 7 Pages
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2N4338/4339/4340/4341
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
1500
10
1200
gos
8
Common-Source Forward Transconductance
vs. Drain Current
2
VGS(off) = −1.5 V
VDS = 10 V
f = 1 kHz
1.6
900
rDS
6
1.2
TA = −55_C
600
4
0.8
25_C
300
0
0
400
320
rDS @ ID = 100 mA, VGS = 0 V
gos @ VDS= 10 V, VGS = 0 V, f = 1 kHz
−1
−2
−3
−4
VGS(off) − Gate-Source Cutoff Voltage (V)
2
0
−5
Output Characteristics
VGS(off) = −0.7 V
VGS = 0 V
240
−0.1 V
160
−0.2 V
−0.3 V
80
−0.5 V
−0.4 V
0
0
4
8
12
16
20
VDS − Drain-Source Voltage (V)
Output Characteristics
300
VGS(off) = −0.7 V
240
VGS = 0 V
−0.1 V
180
120
60
0
0
−0.2 V
−0.3 V
−0.4 V
−0.5 V
0.1
0.2
0.3
0.4
0.5
VDS − Drain-Source Voltage (V)
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4
0.4
125_C
0
0.01
0.1
1
ID − Drain Current (mA)
Output Characteristics
2
VGS(off) = −1.5 V
1.6
VGS = 0 V
1.2
−0.3 V
0.8
−0.6 V
0.4
−1.2 V
−0.9 V
0
0
4
8
12
16
20
VDS − Drain-Source Voltage (V)
Output Characteristics
1
VGS(off) = −1.5 V
0.8
VGS = 0 V
0.6
−0.3 V
−0.6 V
0.4
0.2
0
0
−0.9 V
−1.2 V
0.2
0.4
0.6
0.8
1.0
VDS − Drain-Source Voltage (V)
Document Number: 70240
S-40990—Rev. F, 24-May-04
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