IXTT12N150 데이터 시트보기 (PDF) - IXYS CORPORATION
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IXTT12N150 Datasheet PDF : 4 Pages
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IXTT12N150
IXTH12N150
Fig. 7. Transconductance
22
20
TJ = - 40ºC
18
16
25ºC
14
12
125ºC
10
8
6
4
2
0
0
2
4
6
8
10
12
14
ID - Amperes
40
35
30
25
20
15
10
5
0
0.3
Fig. 8. Forward Voltage Drop of Intrinsic Diode
TJ = 125ºC
TJ = 25ºC
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VSD - Volts
Fig. 9. Gate Charge
10
10,000
Fig. 10. Capacitance
9
VDS = 700V
8
I D = 6A
I G = 10mA
7
6
5
1,000
Ciss
Coss
4
3
2
1
0
0 10 20 30 40 50 60 70 80 90 100 110
QG - NanoCoulombs
100
Crss
f = 1 MHz
10
0
5
10
15
20
25
30
35
40
VDS - Volts
Fig. 11. Forward-Bias Safe Operating Area
100
Fig. 12. Maximum Transient Thermal Impedance
1
RDS(on) Limit
10
25µs
0.1
100µs
1ms
1
0.01
TJ = 150ºC
TC = 25ºC
Single Pulse
10ms
DC
0.1
0.001
10
100
1,000
10,000
0.00001
0.0001
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_12N150 (8M) 5-23-11
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