STI21N65M5 데이터 시트보기 (PDF) - STMicroelectronics

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STI21N65M5

N-channel 650 V, 0.150 Ω, 17 A MDmesh™ V Power MOSFET D²PAK, TO-220FP, TO-220, I²PAK, TO-247

STMicroelectronics 

STB/F/I/P/W21N65M5

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

td (v)

tr (v)

tf (i)

tc(off)

Voltage delay time

Voltage rise time

Current fall time

Crossing time

Test conditions

VDD = 400 V, ID = 11 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 21)

(see Figure 24)

Min. Typ. Max Unit

37

ns

10

ns

-

-

12

ns

24

ns

Table 7.

Symbol

Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

ISD Source-drain current

ISDM (1) Source-drain current (pulsed)

-

VSD (2) Forward on voltage

ISD = 17 A, VGS = 0

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 17 A, di/dt = 100 A/µs

VDD = 100 V (see Figure 21)

-

trr

Reverse recovery time

ISD = 17 A, di/dt = 100 A/µs

Qrr Reverse recovery charge

VDD = 100 V, Tj = 150 °C

-

IRRM Reverse recovery current

(see Figure 21)

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

17 A

68 A

1.5 V

294

ns

4

µC

28

A

340

ns

5

µC

29

A

Doc ID 15427 Rev 4

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