STI21N65M5 데이터 시트보기 (PDF) - STMicroelectronics
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STI21N65M5
STMicroelectronics
STI21N65M5 Datasheet PDF : 22 Pages
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Electrical characteristics
2
Electrical characteristics
STB/F/I/P/W21N65M5
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on
resistance
VGS = 10 V, ID = 8.5 A
Min. Typ. Max. Unit
650
V
1 µA
100 µA
100 nA
3
4
5
V
0.150 0.179 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
1950
pF
-
46
- pF
3
pF
Co(tr)(1)
Co(er)(2)
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
VDS = 0 to 520 V, VGS = 0
-
133
- pF
-
44
- pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
2.5
-
Ω
Qg
Total gate charge
VDD = 520 V, ID = 8.5 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 20)
50
nC
-
13
- nC
23
nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS.
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS.
4/22
Doc ID 15427 Rev 4
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