NTE912 데이터 시트보기 (PDF) - NTE Electronics

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NTE912

Integrated Circuit General Purpose Transistor Array (Three Isolated Transistors and One Differentially–Connected Transistor Pair)

NTE Electronics 

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Static Characteristics

Collector Base Breakdown Voltage

Collector Emitter Breakdown Voltage

Collector Substrate Breakdown Voltage

Emitter Base Breakdown Voltage

Collector Cutoff Current

Static Forward Current Transfer Ratio

Input Offset Current for Matched Pair

Q1 and Q2. |IIO1– IIO2|

Base Emitter Voltage

Magnitude of Input Offset Voltage for

Differential Pair |VBE1 – VBE2|

Magnitude of Input Offset Voltage for

Isolated Transistors |VBE3 – VBE4|

|VBE4 – VBE5| |VBE5 – VBE3|

Temperature Coefficient of Base Emitter

Voltage

V(BR)CBO IC = 10µA, IE = 0

V(BR)CEO IC = 1mA, IB = 0

V(BR)CIO IC = 10µA, ICI = 0

V(BR)EBO IE = 10µA, IC = 0

ICBO VCB = 10V, IE = 0

ICEO VCE = 10V, IB = 0

hFE VCE = 3V

IC = 10mA

IC = 1mA

IC = 10µA

VCE = 3V, IC = 1mA

VBE VCE = 3V

IE = 1mA

IE = 10mA

VCE = 3V, IC = 1mA

VCE = 3V, IC = 1mA

∆VBE

∆T

VCE = 3V, IC = 1mA

Collector Emitter Saturation Voltage

Temperature Coefficient:

Magnitude of Input–Offset Voltage

VCES

|∆VIO|

∆T

IB = 1mA, IC = 10mA

VCE = 3V, IC = 1mA

Min Typ Max Unit

20 60 –

V

15 24 –

V

20 60 –

V

5

7

–

V

– 0.002 40 nA

–

– 0.5 µA

– 100 –

40 100 –

– 54 –

– 0.3 2.0 µA

– 0.715 –

V

– 0.800 –

V

– 0.45 5.0 mV

– 0.45 5.0 mV

– –1.9 – mV/°C

– 0.23 –

V

– 1.1 – µV/°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max Unit

Dynamic Characteristics

Low–Frequency Noise Figure

NF f = 1kHz, VCE = 3V, IC = 100µA, –

3.25

– dB

Source Resistance = 1kΩ

Low–Frequency, Small–Signal

Equivalent Circuit Characteristics:

Forward Current Transfer Ratio

Short–Circuit Input Impedance

Open–Circuit Output Impedance

Open–Circuit Reverse Voltage

Transfer Ratio

hfe f = 1kHz, VCE = 3V, IC = 1mA

hie

hoe

hre

–

110

–

–

3.5

– kΩ

–

15.6

– µmhos

– 1.8x10–4 –

Admittance Characteristics:

Forward Transfer Admittance

Input Admittance

Yfe f = 1kHz, VCE = 3V, IC = 1mA

Yie

–

31–j1.5

–

– 0.3+j0.04 –

Output Admittance

Yoe

– 0.001+j0.03 –

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