MRFE6VP8600HR6 데이터 시트보기 (PDF) - Freescale Semiconductor

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MRFE6VP8600HR6

RF Power LDMOS Transistors

Freescale Semiconductor 

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Case Temperature 74°C, 125 W CW, 50 V, 1400 mA, 860 MHz

Symbol

RθJC

Value (1,2)

0.19 (3)

Unit

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

2 (2001--4000 V)

Machine Model (per EIA/JESD22--A115)

B (201--400 V)

Charge Device Model (per JESD22--C101)

IV (>1000 V)

Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics (4)

Gate--Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

Drain--Source Breakdown Voltage

(VGS = 0 Vdc, ID = 100 mA)

Zero Gate Voltage Drain Leakage Current

(VDS = 50 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 100 Vdc, VGS = 0 Vdc)

IGSS

—

—

V(BR)DSS

130

140

IDSS

—

—

IDSS

—

—

1

μAdc

—

Vdc

5

μAdc

20

μAdc

On Characteristics

Gate Threshold Voltage (4)

(VDS = 10 Vdc, ID = 980 μAdc)

VGS(th)

1.5

2.07

2.5

Vdc

Gate Quiescent Voltage (5)

(VDD = 50 Vdc, ID = 1400 mAdc, Measured in Functional Test)

VGS(Q)

2.1

2.65

3.1

Vdc

Drain--Source On--Voltage (4)

(VGS = 10 Vdc, ID = 2 Adc)

VDS(on)

—

0.24

—

Vdc

Forward Transconductance

(VDS = 10 Vdc, ID = 20 Adc)

gfs

—

15.6

—

S

Dynamic Characteristics (4)

Reverse Transfer Capacitance (6)

(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

—

1.49

—

pF

Output Capacitance (6)

(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Coss

—

79.9

—

pF

Input Capacitance (7)

(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)

Ciss

—

264

—

pF

Functional Tests (5) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 1400 mA, Pout = 125 W Avg., f = 860 MHz,

DVB--T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Signal Bandwidth @ ±4 MHz Offset with an Integration Bandwidth of 4 kHz.

Power Gain

Gps

18.0

19.3

21.0

dB

Drain Efficiency

ηD

29.0

30.0

—

%

Adjacent Channel Power Ratio

ACPR

—

--60.5

--58.5

dBc

Input Return Loss

IRL

—

--12

--9

dB

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

3. Performance with thermal grease TIM (thermal interface material) will typically degrade by 0.05°C/W due to the increased thermal contact

resistance of this TIM.

4. Each side of device measured separately.

5. Measurement made with device in push--pull configuration.

6. Part internally input matched.

7. Die capacitance value without internal matching.

(continued)

MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5

RF Device Data

2

Freescale Semiconductor

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