IXFT17N80Q 데이터 시트보기 (PDF) - IXYS CORPORATION
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IXFT17N80Q Datasheet PDF : 4 Pages
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Fig. 7. Input Adm ittance
25
20
15
10
TJ = 120ºC
25ºC
5
-40ºC
0
3
3.5
4
4.5
5
5.5
6
VG S - Volts
Fig. 9. Source Current vs. Source-To-
Drain Voltage
50
40
30
TJ = 125ºC
20
TJ = 25ºC
10
0
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
VS D - Volts
10000
Fig. 11. Capacitance
f = 1MHz
1000
Ciss
C os s
100
C rs s
IXFH 17N80Q
IXFT 17N80Q
Fig. 8. Transconductance
40
35
30
TJ = -40ºC
25ºC
25
125ºC
20
15
10
5
0
0
5 10 15 20 25 30 35 40
I D - Amperes
Fig. 10. Gate Charge
10
VDS = 400V
ID = 8.5A
8
IG = 10mA
6
4
2
0
0
20
40
60
80
100
Q G - nanoCoulombs
Fig. 12. Maxim um Transient Therm al
Re s is tance
1
0.1
10
0
5 10 15 20 25 30 35 40
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
0.01
1
10
100
Pulse Width - milliseconds
1000
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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