2SC1384L-R-T9N-T 데이터 시트보기 (PDF) - Unisonic Technologies

부품명

상세내역

제조사

2SC1384L-R-T9N-T

NPN SILICON TRANSISTOR

Unisonic Technologies 

2SC1384

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

5

V

Peak Collector Current

ICP

1.5

A

Collector Current (DC)

Collector Dissipation (Ta=25℃)

IC

1

A

PC

1000

mW

Junction Temperature

TJ

125

℃

Operating Temperature

TOPR

-20 ~ +85

℃

Storage Temperature

TSTG

-40 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector-Base Breakdown Voltage BVCBO IC=10μA, IE=0

Collector-Emitter Breakdown Voltage BVCEO IC=2mA, IB=0

Emitter-Base Breakdown Voltage

BVEBO IE=10μA, IC=0

Collector Cut-Off Current

ICBO VCB=20V, IE=0

DC Current Gain

hFE1

hFE2

VCE=10V, IC=500mA

VCE=5V, IB=1A

Collector-Emitter Saturation Voltage VCE(SAT) IC=0.5A, IB=50mA

Base-Emitter Saturation Voltage

VBE(SAT) IC=0.5A, IB=50mA

Current Gain Bandwidth Product

fT VCE=10V, IB=50mA

Output Capacitance

Cob VCB=10V, IE=0, f=1MHz

„ CLASSIFICATION OF hFE

RANK

RANGE

Q

85-170

R

120-240

MIN TYP MAX UNIT

60

V

50

V

5

V

0.1 μA

85 160 340

50 100

0.2 0.4 V

0.85 1.2 V

200

MHz

11 20 pF

S

170-340

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 5

QW-R211-005.C

Share Link: