2SC1162-B 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SC1162-B

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC1162

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 35

—

voltage

Collector to emitter breakdown V(BR)CEO 35

—

voltage

Emitter to base breakdown

V(BR)EBO

5

—

voltage

Collector cutoff current

DC current transfer ratio

I CBO

—

—

hFE*1

60

—

hFE

20

—

Base to emitter voltage

VBE

—

0.93

Collector to emitter saturation VCE(sat)

—

0.5

voltage

Gain bandwidth product

fT

—

180

Note: 1. The 2SC1162 is grouped by hFE as follows.

Max

—

—

—

20

320

—

1.5

1.0

—

Unit

V

V

V

µA

V

V

MHz

Test conditions

IC = 1 mA, IE = 0

IC = 10 mA, RBE = ∞

IE = 1 mA, IC = 0

VCB = 35 V, IE = 0

VCE = 2 V, IC = 0.5 A

VCE = 2 V, IC = 1.5 A

(pulse test)

VCE = 2 V, IC = 1.5 A

(pulse test)

IC = 2 A, IB = 0.2 A (pulse test)

VCE = 2 V, IC = 0.2 A

B

60 to 120

C

D

100 to 200 160 to 320

Maximum Collector Dissipation Curve

0.8

0.75

0.6

0.4

0.2

0

50

100

150

200

Ambient temperature Ta (°C)

Area of Safe Operation

5

IC(max)(DC Operation)

TC = 25°C

2

1.0

0.5

0.2

0.1

1

2

5 10 20

50

Collector to emitter voltage VCE (V)

2

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