FDS8878 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS8878 Datasheet PDF : 12 Pages
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Typical Characteristics TJ = 25°C unless otherwise noted
1.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.4
2000
1000
1.2
CRSS = CGD
CISS = CGS + CGD
COSS ≅ CDS + CGD
1.0
0.8
-80
VGS = 10V, ID = 10.2A
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
VDD = 15V
8
6
4
2
0
0
WAVEFORMS IN
DESCENDING ORDER:
ID = 10.2A
ID = 1A
3
6
9
12
15
18
Qg, GATE CHARGE (nC)
Figure 13. Gate Charge Waveforms for Constant
Gate Currents
VGS = 0V, f = 1MHz
10
0.1
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 12. Capacitance vs Drain to Source
Voltage
100
10
1
0.1
0.01
0.01
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 125oC/W
TA = 25oC
0.1
1
10
VDS, DRAIN to SOURCE VOLTAGE (V)
100us
1ms
10ms
100ms
1s
10s
DC
100
Figure 14. Forward Bias Safe Operating Area
©2007 Fairchild Semiconductor Corporation
6
FDS8878 Rev. B
www.fairchildsemi.com
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