IRS2509SPBF 데이터 시트보기 (PDF) - International Rectifier

부품명

상세내역

제조사

IRS2509SPBF

HALF-BRIDGE DRIVER

International Rectifier 

IRS2509SPbF

Application Information and Additional Details

Informations regarding the following topics are included as subsections within this section of the datasheet.

 IGBT/MOSFET Gate Drive

 Switching and Timing Relationships

 Deadtime

 Matched Propagation Delays

 Shut down Input

 Input Logic Compatibility

 Undervoltage Lockout Protection

 Shoot-Through Protection

 Negative VS Transient SOA

 PCB Layout Tips

 Additional Documentation

IGBT/MOSFET Gate Drive

The IRS2509 HVIC is designed to drive MOSFET or IGBT power devices. Figures 1 and 2 illustrate several parameters associated

with the gate drive functionality of the HVIC. The output current of the HVIC, used to drive the gate of the power switch, is defined as

IO. The voltage that drives the gate of the external power switch is defined as VHO for the high-side power switch and VLO for the low-

side power switch; this parameter is sometimes generically called VOUT and in this case does not differentiate between the high-side

or low-side output voltage.

Figure 1: HVIC sourcing current

Figure 2: HVIC sinking current

www.irf.com

6

Share Link: