BAT54CXV3T1G 데이터 시트보기 (PDF) - ON Semiconductor
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BAT54CXV3T1G Datasheet PDF : 4 Pages
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BAT54CXV3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 mA)
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
V(BR)R
30
−
−
V
CT
−
7.6
10
pF
Reverse Leakage
(VR = 25 V)
IR
−
0.5
2.0
mAdc
Forward Voltage
(IF = 0.1 mA)
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 30 mA)
(IF = 100 mA)
VF
V
−
0.22
0.24
−
0.29
0.32
−
0.35
0.40
−
0.41
0.50
−
0.52
0.80
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
trr
−
−
5.0
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 W
+10 V
2k
100 mH IF
0.1 mF
0.1 mF
tr
tp
T
IF
10%
trr
T
50 W OUTPUT
PULSE
GENERATOR
DUT
50 W INPUT
SAMPLING
OSCILLOSCOPE VR
90%
INPUT SIGNAL
iR(REC) = 1 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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