IRFP254NPBF 데이터 시트보기 (PDF) - Vishay Siliconix
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IRFP254NPBF Datasheet PDF : 8 Pages
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IRFP254N, SiHFP254N
Vishay Siliconix
4000
3000
2000
1000
VGS = 0 V,
Ciss = Cgs + Cgd, Cds
Crss = Cgd
Coss = Cds + Cgd
f = 1 MHz
SHORTED
Ciss
Coss
Crss
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
ID = 14 A
16
VDS = 200 V
VDS = 125 V
VDS = 50 V
12
8
4
For Test Circuit
See Fig. 13
0
0
20
40
60
80
100
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
TJ = 175 °C
10
1
TJ = 25 °C
0.1
0.2
VGS = 0 V
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
100
OPERATING IN THIS AREA LIMITED
BY RDS(on)
10
100 µs
1 ms
1
TC = 25 °C
TJ = 175 °C
0.1 Single Pulse
1
10
10 ms
100
1000
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
10000
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4
Document Number: 91213
S09-0006-Rev. A, 19-Jan-09
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