MJ413 데이터 시트보기 (PDF) - Inchange Semiconductor

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MJ413

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

MJ413

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0

325

VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA

VBE(sat) Base-Emitter Saturation Voltage

ICEX

Collector Cutoff Current

IEBO

Emitter Cutoff current

IC= 0.5A; IB= 50mA

VCE= 400V;VEB(off)=1.5V

VCE= 400V;VEB(off)=1.5V;TC=125℃

VEB= 5V; IC= 0

hFE-1

DC Current Gain

IC= 0.5A; VCE=5V

20

hFE-2

DC Current Gain

IC= 1A; VCE=5V

15

fT

Current-Gain—Bandwidth Product IC= 0.2A; VCE=10V; f=1.0MHz

2.5

V

0.8

V

1.25 V

0.25

0.5

mA

5.0 mA

80

MHz

isc Website：www.iscsemi.cn

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