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GB18N40LZ(2008_03) 데이터 시트보기 (PDF) - STMicroelectronics

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GB18N40LZ
(Rev.:2008_03)
ST-Microelectronics
STMicroelectronics 
GB18N40LZ Datasheet PDF : 18 Pages
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STGD18N40LZ - STGB18N40LZ
Electrical characteristics
Table 5. Dynamic electrical characteristics
Symbol
Parameter
Test conditions
Cies
Coes
Cres
Qg
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
VCE = 25 V, f = 1 MHz,
VGE = 0
VCE = 280 V, IC = 10 A,
VGE = 5 V
Min. Typ. Max. Unit
490
pF
90
pF
6.5
pF
23
nC
Table 6. Switching on/off
Symbol
Parameter
td(on)
tr
td(on)
tr
td(off)
tf
dv/dt
td(off)
tf
dv/dt
Resistive load
Turn-on delay time
Rise time
Resistive load
Turn-on delay time
Rise time
Inductive load
Turn-off delay time
Fall time
Turn-off voltage slope
Inductive load
Turn-off delay time
Fall time
Turn-off voltage slope
Test conditions
VCC = 14 V, IC = 10 A
RG = 1 k, VGE = 5 V
VCC = 14 V, IC = 10 A
RG = 1 k, VGE = 5 V,
TC = 150 °C
Min. Typ. Max. Unit
1
µs
5.8
µs
1
µs
5.9
µs
VCC = 300 V, L = 1 mH
RG = 1 k, VGE = 5 V
VCC = 300 V, L = 1 mH
RG = 1 k, VGE = 5 V
TC = 150 °C
14
µs
6.7
µs
90
V/µs
15
µs
9.8
µs
80
V/µs
5/18

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