GS8161E36T 데이터 시트보기 (PDF) - Giga Semiconductor

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GS8161E36T

1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

Giga Semiconductor 

DC Electrical Characteristics

Parameter

Input Leakage Current

(except mode pins)

ZZ Input Current

FT, SCD, ZQ Input Current

Output Leakage Current

Output High Voltage

Output High Voltage

Output Low Voltage

Symbol

IIL

IIN1

IIN2

IOL

VOH2

VOH3

VOL

GS8161E18(T/D)/GS816132(D)/GS816136(T/D)

Test Conditions

VIN = 0 to VDD

VDD ≥ VIN ≥ VIH

0 V ≤ VIN ≤ VIH

VDD ≥ VIN ≥ VIL

0 V ≤ VIN ≤ VIL

Output Disable, VOUT = 0 to VDD

IOH = –8 mA, VDDQ = 2.375 V

IOH = –8 mA, VDDQ = 3.135 V

IOL = 8 mA

Min

–1 uA

–1 uA

–1 uA

–100 uA

–1 uA

–1 uA

1.7 V

2.4 V

—

Max

1 uA

1 uA

100 uA

1 uA

1 uA

1 uA

—

—

0.4 V

Rev: 2.13 11/2004

18/36

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 1999, GSI Technology

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