PBLS6004D 데이터 시트보기 (PDF) - NXP Semiconductors.
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PBLS6004D Datasheet PDF : 16 Pages
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NXP Semiconductors
PBLS6004D
60 V PNP BISS loadswitch
103
Zth(j-a)
(K/W) δ = 1
0.75
102
0.5
0.33
0.2
0.1
0.05
10 0.02
0.01
0
006aaa464
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Fig 4.
Ceramic PCB, Al2O3, standard footprint
TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time;
typical values
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
TR1; PNP low VCEsat transistor
ICBO
collector-base cut-off
current
VCB = −60 V; IE = 0 A
-
VCB = −60 V; IE = 0 A;
-
Tj = 150 °C
ICES
collector-emitter cut-off
VCE = −60 V; VBE = 0 V
-
current
IEBO
hFE
VCEsat
RCEsat
VBEsat
emitter-base cut-off current VEB = −5 V; IC = 0 A
DC current gain
VCE = −5 V; IC = −1 mA
VCE = −5 V;
IC = −500 mA
VCE = −5 V;
IC = −1000 mA
collector-emitter saturation IC = −100 mA;
voltage
IB = −1 mA
IC = −500 mA;
IB = −50 mA
IC = −1000 mA;
IB = −100 mA
collector-emitter saturation IC = −1 A;
resistance
IB = −100 mA
base-emitter saturation
voltage
IC = −1 A; IB = −50 mA
-
200
[1] 150
[1] 100
-
[1] -
[1] -
[1] -
[1] -
Typ Max Unit
-
−100 nA
-
−50 µA
-
−100 nA
-
−100 nA
350 -
230 -
160 -
−110 −175 mV
−135 −180 mV
−255 −340 mV
255 340 mΩ
−0.95 −1.1 V
PBLS6004D_2
Product data sheet
Rev. 02 — 7 September 2009
© NXP B.V. 2009. All rights reserved.
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