PMBFJ310 데이터 시트보기 (PDF) - NXP Semiconductors.
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PMBFJ310 Datasheet PDF : 15 Pages
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NXP Semiconductors
PMBFJ308; PMBFJ309; PMBFJ310
N-channel silicon field-effect transistors
7. Static characteristics
Table 7. Static characteristics
Tj = 25 C; unless otherwise specified.
Symbol Parameter
Conditions
V(BR)GSS gate-source breakdown voltage IG = 1 A; VDS = 0 V
VGSoff
gate-source cut-off voltage
PMBFJ308
PMBFJ309
PMBFJ310
ID = 1 A; VDS = 10 V
ID = 1 A; VDS = 10 V
ID = 1 A; VDS = 10 V
VGSS
gate-source forward voltage
IG = 1 mA; VDS = 0 V
IDSS
drain-source leakage current
PMBFJ308
VGS = 0 V; VDS = 10 V
PMBFJ309
VGS = 0 V; VDS = 10 V
PMBFJ310
VGS = 0 V; VDS = 10 V
IGSS
gate-source leakage current
VGS = 15 V; VDS = 0 V
RDSon
yfs
yos
drain-source on-state resistance VGS = 0 V; VDS = 100 mV
forward transfer admittance
ID = 10 mA; VDS = 10 V
common source output admittance ID = 10 mA; VDS = 10 V
8. Dynamic characteristics
Table 8. Dynamic characteristics
Tj = 25 C; unless otherwise specified.
Symbol Parameter
Ciss
input capacitance
Crss
reverse transfer capacitance
gis
input conductance
gfs
transfer conductance
grs
reverse conductance
gos
output conductance
Vn
equivalent input noise voltage
Conditions
VDS = 10 V
VGS = 10 V; f = 1 MHz
VGS = 0 V; Tamb = 25 C
VDS = 0 V; VGS = 10 V; f = 1 MHz
VDS = 10 V; ID = 10 mA
f = 100 MHz
f = 450 MHz
VDS = 10 V; ID = 10 mA
f = 100 MHz
f = 450 MHz
VDS = 10 V; ID = 10 mA
f = 100 MHz
f = 450 MHz
VDS = 10 V; ID = 10 mA
f = 100 MHz
f = 450 MHz
VDS = 10 V; ID = 10 mA; f = 100 Hz
Min Typ
25 -
1 -
1 -
2 -
--
Max Unit
-V
V
6.5 V
4 V
6.5 V
1V
12 -
12 -
24 -
--
- 50
10 -
--
60 mA
30 mA
60 mA
1 nA
-
- mS
250 S
Min Typ Max Unit
-3
5 pF
-6
- pF
- 1.3 2.5 pF
- 200 - S
-3
- mS
- 13 - mS
- 12 - mS
- 30 - S
- 450 - S
- 150 - S
- 400 - S
-6
- nV/Hz
PMBFJ308_309_310
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 September 2011
© NXP B.V. 2011. All rights reserved.
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