SIHFPS38N60L-E3 데이터 시트보기 (PDF) - Vishay Semiconductors
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SIHFPS38N60L-E3 Datasheet PDF : 9 Pages
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IRFPS38N60L, SiHFPS38N60L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
320
0.12
85
160
Single
D
Super-247
G
S
D
G
ORDERING INFORMATION
Package
S
N-Channel MOSFET
Lead (Pb)-free
SnPb
FEATURES
• Superfast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
• Lower Gate Charge Results in Simple Drive
Requirements
Available
RoHS*
COMPLIANT
• Enhanced dV/dt Capabilities Offer Improved
Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uniterruptible Power Supplies
• Motor Control applications
Super-247
IRFPS38N60LPbF
SiHFPS38N60L-E3
IRFPS38N60L
SiHFPS38N60L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).
b. Starting TJ = 25 °C, L = 0.91 mH, Rg = 25 , IAS = 38 A, dV/dt = 13 V/ns (see fig. 14a).
c. ISD 38 A, dI/dt 630 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91259
S11-0111-Rev. B, 07-Feb-11
LIMIT
600
± 30
38
24
150
4.3
680
38
54
540
19
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
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