2N6517 데이터 시트보기 (PDF) - ON Semiconductor
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2N6517 Datasheet PDF : 8 Pages
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2N6515, 2N6517, 2N6520
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
2N6515
2N6517, 2N6520
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0 )
2N6515
2N6517, 2N6520
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
2N6515, 2N6517
2N6520
Collector Cutoff Current
(VCB = 150 Vdc, IE = 0)
(VCB = 250 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
2N6515
2N6517, 2N6520
2N6515, 2N6517
2N6520
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
(IC = 10 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
(IC = 30 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
(IC = 50 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
(IC = 100 mAdc, VCE = 10 Vdc)
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
Base−Emitter On Voltage
(IC = 100 mAdc, VCE = 10 Vdc)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2N6515
2N6517, 2N6520
Symbol
Min
V(BR)CEO
250
350
V(BR)CBO
250
350
V(BR)EBO
6.0
5.0
ICBO
−
−
IEBO
−
−
hFE
35
20
50
30
50
30
45
20
25
15
VCE(sat)
−
−
−
−
VBE(sat)
−
−
−
VBE(on)
−
Max
Unit
Vdc
−
−
Vdc
−
−
Vdc
−
−
nAdc
50
50
nAdc
50
50
−
−
−
−
−
300
200
220
200
−
−
Vdc
0.30
0.35
0.50
1.0
Vdc
0.75
0.85
0.90
2.0
Vdc
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