SC1405B 데이터 시트보기 (PDF) - Semtech Corporation
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SC1405B Datasheet PDF : 12 Pages
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HIGH SPEED SYNCHRONOUS POWER
MOSFET SMART DRIVER
SC1405B
March 14, 2000
ELECTRICAL CHARACTERISTICS (DC OPERATING SPECIFICATIONS) Cont.
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
OVERVOLTAGE PROTECTION
Trip Threshold
Hysteresis
S_MOD
VTRIP
VhysOVP
1.145 1.2 1.255 V
0.8
V
High Level Input Voltage
VIH
Low Level Input Voltage
VIL
ENABLE
2.0
V
0.8
V
High Level Input Voltage
VIH
Low Level Input Voltage
VIL
CO
2.0
V
0.8
V
High Level Input Voltage
VIH
Low Level Input Voltage
VIL
THERMAL SHUTDOWN
2.0
V
0.8
V
Over Temperature Trip Point
Hysteresis
HIGH-SIDE DRIVER
TOTP
THYST
165
°C
10
°C
Peak Output Current
Output Resistance
IPKH
2
A
RsrcTG
duty cycle < 2%, tpw < 100µs,
1
Ω
TJ = 125°C, VBST - VDRN = 4.5V,
VTG = 4.0V (src)+VDRN
RsinkTG
or VTG = 0.5V (sink)+VDRN
.7
Ω
LOW-SIDE DRIVER
Peak Output Current
IPKL
2
A
Output Resistance
RsrcBG
duty cycle < 2%, tpw < 100µs,
1.2
Ω
TJ = 125°C
RsinkBG
VV_5 = 4.6V, VBG = 4V (src),
1.0
Ω
or VLOWDR = 0.5V (sink)
© 2000 SEMTECH CORP.
3
652 MITCHELL ROAD NEWBURY PARK CA 91320
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