PZTA64 데이터 시트보기 (PDF) - Siemens AG

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PZTA64

PNP Silicon Darlington Transistors

Siemens AG 

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 100 µA

Collector-base breakdown voltage

IC = 100 µA, IB = 0

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

Collector-base cutoff current

VCE = 30 V, IE = 0

VCE = 30 V, IE = 0, TA = 150 ˚C

Emitter-base cutoff current

VEB = 10 V, IC = 0

DC current gain

IC = 10 mA, VCE = 5 V

IC = 100 mA, VCE = 5 V

PZTA 63

PZTA 64

PZTA 63

PZTA 64

Collector-emitter saturation voltage1)

IC = 100 mA, IB = 0.1 mA

Base-emitter saturation voltage1)

IC = 100 mA, IB = 0.1 mA

AC characteristics

Transition frequency

IC = 50 mA, VCE = 5 V, f = 100 MHz

PZTA 63

PZTA 64

Symbol

Values

Unit

min. typ. max.

V(BR)CES 30

–

V(BR)CB0 30

–

V(BR)EB0 10

–

ICB0

–

–

–

–

IEB0

–

–

hFE

VCEsat

5000 –

10000 –

10000 –

20000 –

–

–

VBEsat

–

–

–

V

–

–

100 nA

10

µA

100 nA

–

–

–

–

–

1.5 V

2.0

fT

125 –

–

MHz

1) Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group

2

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