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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

IS62VV25616LL 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS62VV25616LL
ISSI
Integrated Silicon Solution 
IS62VV25616LL Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
IS62VV25616L/LL
ISSI ®
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range)
Symbol Parameter
-70
-85
-100
Min. Max.
Min. Max.
Min. Max.
Unit
tWC
Write Cycle Time
70
85
100
ns
tSCE
CE to Write End
65
70
80
ns
tAW
Address Setup Time to Write End 65
70
80
ns
tHA
Address Hold from Write End
0
0
0
ns
tSA
Address Setup Time
0
0
0
ns
tPWB
LB, UB Valid to End of Write
60
70
80
ns
tPWE
WE Pulse Width
55
60
80
ns
tSD
Data Setup to Write End
30
35
40
ns
tHD
Data Hold from Write End
0
0
0
ns
tHZWE(3) WE LOW to High-Z Output
30
30
40
ns
tLZWE(3) WE HIGH to Low-Z Output
5
5
5
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V, input pulse levels of 0.4V to 1.4V and
output loading specified in Figure 1.
2. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but
any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write.
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
AC WAVEFORMS
WRITE CYCLE NO. 1(1,2) (CE Controlled, OE = HIGH or LOW)
t WC
ADDRESS
t SA
CE
WE
VALID ADDRESS
t SCS
t HA
t AW
t PWE1
t PWE2
UB, LB
DOUT
t PBW
DATA UNDEFINED
t HZWE
HIGH-Z
t LZWE
t SD
t HD
DIN
DATAIN VALID
UB_CSWR1.eps
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CE and WE inputs and at least one of
the LB and UB inputs being in the LOW state.
2. WRITE = (CE) [ (LB) = (UB) ] (WE).
Integrated Silicon Solution, Inc. 1-800-379-4774
7
PRELIMINARY INFORMATION Rev. 00C
11/30/00

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