IS62VV25616LL-85MI(2002) 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS62VV25616LL-85MI
(Rev.:2002)

256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM

Integrated Silicon Solution 

IS62VV25616LL

OPERATING RANGE

Range

Commercial

Industrial

Ambient Temperature

0°C to +70°C

–40°C to +85°C

VDD

1.7V - 2.25V

1.7V - 2.25V

ISSI ®

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

Parameter

Value

Unit

VTERM

Terminal Voltage with Respect to GND

–0.2 to VDD+0.25

V

VDD

Vdd Related to GND

–0.2 to +2.5

V

TSTG

Storage Temperature

–65 to +150

°C

PT

Power Dissipation

1.0

W

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at these or any other conditions above those indicated in the

operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods

may affect reliability.

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

Test Conditions

VOH

Output HIGH Voltage

IOH = -0.1 mA

VOL

Output LOW Voltage

IOL = 0.1 mA

VIH

Input HIGH Voltage

VIL(1)

Input LOW Voltage

ILI

Input Leakage

GND ≤ VIN ≤ VDD

ILO

Output Leakage

GND ≤ VOUT ≤ VDD, Outputs Disabled

Notes:

1. VIL (min.) = –1.0V for pulse width less than 10 ns.

Min.

Max.

Unit

1.4

—

V

—

0.2

V

1.4

VDD + 0.2

V

–0.3

0.4

V

–1

1

µA

–1

1

µA

CAPACITANCE(1)

Symbol Parameter

Conditions

Max.

CIN

Input Capacitance

VIN = 0V

8

COUT

Input/Output Capacitance

VOUT = 0V

10

Note:

1. Tested initially and after any design or process changes that may affect these parameters.

Unit

pF

pF

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

3

Rev. B

08/07/02

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