BAV19WS 데이터 시트보기 (PDF) - Diotec Semiconductor Germany
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BAV19WS Datasheet PDF : 2 Pages
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BAV19WS...BAV21WS
Characteristics (Tj = 25° C)
Forward voltage 1)
Durchlass-Spannung
IF = 100 mA
IF = 200 mA
Leakage current 1)
Sperrstrom
Tj = 25° C
BAV19WS
BAV20WS
BAV21WS
VR = 100 V
VR = 150 V
VR = 200 V
Max. junction capacitance – Max. Sperrschichtkapazität
VR = 0 V, f = 1 MHz
Reverse recovery time – Sperrverzug
IF = 30 mA über/ through IR = 30 mA bis / to IR = 1 mA
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Marking – Stempelung
BAV19WS
BAV20WS
BAV21WS
Kennwerte (Tj = 25° C)
VF
<1V
VF
< 1.25 V
IR
< 100 nA
CT
< 5 pF
trr
< 50 ns
RthA
< 625 K/W 2
WO
120
[%]
100
80
60
40
20
Ptot
0
0 TA 50
100
150 [°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von d. Umgebungstemp.1)
1
[A]
10-1
10-2
Tj = 125°C
10-3
Tj = 25°C
IF
10-4
0 VF 0.4 0.6 0.8 1.0 [V] 1.4
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
1 Tested with pulses tp = 300 µs, duty cycles ≤ 2 %
gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2 %
2 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
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