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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

ST303C08DP2 데이터 시트보기 (PDF) - International Rectifier

부품명
상세내역
제조사
ST303C08DP2
IR
International Rectifier 
ST303C08DP2 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
ST303C..L Series
On-state Conduction
Parameter
VTM Max. peak on-state voltage
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1
Low level value of forward
slope resistance
rt2
High level value of forward
slope resistance
IH
Maximum holding current
IL
Typical atching current
ST303C..L Units Conditions
2.16
ITM= 1255A, TJ = TJ max, tp = 10ms sine wave pulse
1.44
V
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
1.48
(I > π x IT(AV)), TJ = TJ max.
0.57
0.56
600
1000
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
m
(I > π x IT(AV)), TJ = TJ max.
mA
TJ = 25°C, IT > 30A
TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Switching
Parameter
ST303C..L Units Conditions
di/dt Max. non-repetitive rate of rise
of turned-on current
td
Typical delay time
tq
Max. turn-off time (*)
1000
0.83
Min Max
10 30
A/µs
µs
TJ = TJ max, VDRM = rated VDRM
ITM = 2 x di/dt
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs
Resistive load Gate pulse: 10V, 5source
TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs
VR = 50V, tp = 500µs, dv/dt: see table in device code
(*) tq = 10 to 20µs for 400 to 800V devices; tq = 15 to 30µs for 1000 to 1200V devices.
Blocking
Parameter
ST303C..L Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
IRRM Max. peak reverse and off-state
IDRM leakage current
500
V/µs
TJ = TJ max. linear to 80% VDRM, higher value
available on request
50
mA TJ = TJ max, rated VDRM/VRRM applied
Triggering
Parameter
PGM Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
+VGM Maximum peak positive
gate voltage
-VGM
IGT
VGT
IGD
VGD
Maximum peak negative
gate voltage
Max. DC gate current required
to trigger
Max. DC gate voltage required
to trigger
Max. DC gate current not to trigger
Max. DC gate voltage not to trigger
ST303C..L Units Conditions
60
10
W TJ = TJ max, f = 50Hz, d% = 50
10
A
TJ = TJ max, tp 5ms
20
V
TJ = TJ max, tp 5ms
5
200
3
20
0.25
mA
TJ = 25°C, VA = 12V, Ra = 6
V
mA
V
TJ = TJ max, rated VDRM applied

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