SI9934BDY-T1-E3 데이터 시트보기 (PDF) - Vishay Semiconductors
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SI9934BDY-T1-E3 Datasheet PDF : 5 Pages
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Si9934BDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = −250 mA
VDS = 0 V, VGS = "8 V
VDS = −12 V, VGS = 0 V
VDS = −12 V, VGS = 0 V, TJ = 55_C
VDS = −5 V, VGS = −4.5 V
VGS = −4.5 V, ID = −6.4 A
VGS = −2.5 V, ID = −1.8 A
VDS = −10 V, ID = −6.4 A
IS = −1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
VDS = 6 V, VGS = −4.5 V, ID = −6.4 A
VDD = 6 V, RL = 6 W
ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W
IF = −1.7 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min
Typ
Max Unit
−0.6
−1.4
V
"100
nA
−1
mA
−5
−20
A
0.028
0.035
W
0.044
0.056
17
S
−0.8
−1.2
V
13
20
2.6
nC
4.0
9
W
19
30
35
55
80
120
ns
50
75
40
80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
20
16
12
8
4
0
0
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2
Output Characteristics
VGS = 5 thru 3 V
2.5 V
2V
1.5 V
1
2
3
4
5
VDS − Drain-to-Source Voltage (V)
Transfer Characteristics
20
16
12
8
TC = 125_C
4
25_C
−55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS − Gate-to-Source Voltage (V)
Document Number: 72525
S-41578—Rev. C, 23-Aug-04
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