NDD03N60Z-1G 데이터 시트보기 (PDF) - ON Semiconductor
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NDD03N60Z-1G Datasheet PDF : 10 Pages
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NDF03N60Z, NDP03N60Z,
NDD03N60Z
N-Channel Power MOSFET
600 V, 3.3 W
Features
• Low ON Resistance
• Low Gate Charge
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDF
NDP NDD Unit
Drain−to−Source Voltage
VDSS
600
V
Continuous Drain Current
RqJC
ID
3.0
3.0
2.6
A
(Note 1)
Continuous Drain Current
RqJC TA = 100°C
ID
1.9
1.9 1.65 A
(Note 1)
Pulsed Drain Current, VGS
IDM
12
12
@ 10 V
(Note 1)
10
A
Power Dissipation RqJC
PD
Gate−to−Source Voltage
VGS
Single Pulse Avalanche
EAS
Energy, ID = 3.0 A
ESD (HBM)
Vesd
(JESD 22−A114)
25
78
30
100
3000
61
W
V
mJ
V
RMS Isolation Voltage (t =
0.3 sec., R.H. ≤ 30%,
TA = 25°C) (Figure 17)
Peak Diode Recovery
VISO
dv/dt
4500
4.5 (Note 2)
V
V/ns
Continuous Source Current
IS
(Body Diode)
3.0
A
Maximum Temperature for
TL
Soldering Leads
260
°C
Operating Junction and
TJ, Tstg
−55 to 150
°C
Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. ISD = 3.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
http://onsemi.com
VDSS
600 V
RDS(on) (TYP) @ 1.2 A
3.3 W
N−Channel
D (2)
G (1)
S (3)
4
4
1
2
3
1
2
3
1
2
3
12
3
TO−220FP TO−220AB IPAK
DPAK
CASE 221D CASE 221A CASE 369D CASE 369AA
STYLE 1 STYLE 5 STYLE 2 STYLE 2
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
April, 2010 − Rev. 3
Publication Order Number:
NDF03N60Z/D
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