MMBTA05
Preliminary
AMPLIFIER TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
4
V
Collector current - Continuous
Power Dissipation, @TA=25℃
Junction Temperature
Storage Temperature
IC
PD
TJ
TSTG
500
mA
150
mW
125
℃
-40 ~ +150
℃
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
junction to ambient (Note)
θJA
833
junction to case
θJC
347
Note: θJA is measured with the device soldered into a typical printed circuit board.
UNIT
℃/W
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector cutoff current
V(BR)CEO
V(BR)EBO
ICEO
ICBO
IC=1.0mA, IB=0(Note 1)
IE=100μA, Ic=0
VCE=60V, IB=0
VCB=60V, IE=0
60
V
4
V
0.1 μA
0.1 μA
ON CHARACTERISTICS
DC current gain
hFE
IC=10mA, VCE=1V
IC=100mA, VCE=1V
100
100
Collector-emitter saturation voltage VCE(SAT) IC=100mA, IB=10mA
0.25 V
Base-emitter on voltage
VBE(ON) IC=100mA, VCE=1V
1.2 V
SMALL-SIGNAL CHARACTERISTICS
Current gain bandwidth product
fT
IC=10mA, VCE=2V, f=100MHz(Note 2) 100
MHz
Note 1. Pulse test: PW<=300μs, Duty Cycle<=2%
2. fT is defined as the frequency at which IhfeI extrapolates to unity.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-099.a