2N4124(1997) 데이터 시트보기 (PDF) - Fairchild Semiconductor

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2N4124
(Rev.:1997)

NPN General Purpose Amplifier

Fairchild Semiconductor 

NPN General Purpose Amplifier

(continued)

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown Voltage

V(BR)CBO

Collector-Base Breakdown Voltage

V(BR)EBO

Emitter-Base Breakdown Voltage

ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC = 1.0 mA, IB = 0

IC = 10 µA, IE = 0

IC = 10 µA, IC = 0

VCB = 20 V, IE = 0

VEB = 3.0 V, IC = 0

25

V

30

V

5.0

V

50

nA

50

nA

ON CHARACTERISTICS*

hFE

DC Current Gain

VCE(sat)

VBE(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

IC = 2.0 mA, VCE = 1.0 V

IC = 50 mA, VCE = 1.0 V

IC = 50 mA, IB = 5.0 mA

IC = 50 mA, IB = 5.0 mA

120

360

60

0.3

V

0.95

V

SMALL SIGNAL CHARACTERISTICS

fT

Current Gain - Bandwidth Product

IC = 10 mA, VCE = 20 V,

300

f = 100 MHz

MHz

Cobo

Output Capacitance

VCB = 5.0 V, IE = 0,

f = 100 kHz

4.0

pF

Cibo

Input Capacitance

VBE = 0.5 V, IC = 0,

f = 1.0 kHz

8.0

pF

Ccb

Collector-Base Capcitance

VCB = 5.0 V, IE = 0,

f = 100 kHz

4.0

pF

hfe

Small-Signal Current Gain

VCE = 10 V, IC = 2.0 mA,

f = 1.0 kHz

120

480

NF

Noise Figure

IC = 100 µA, VCE = 5.0 V,

RS =1.0kΩ, f=10 Hz to 15.7 kHz

5.0

dB

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

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