MMBT2369ALT1 데이터 시트보기 (PDF) - ON Semiconductor
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MMBT2369ALT1 Datasheet PDF : 8 Pages
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MMBT2369LT1,
MMBT2369ALT1
MMBT2369ALT1 is a Preferred Device
Switching Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature
Symbol
VCEO
VCES
VCBO
VEBO
IC
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Value
15
40
40
4.5
200
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
°C/W
–55 to
°C
+150
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT–23
CASE 318
STYLE 6
MARKING DIAGRAMS
M1J X
1JA X
MMBT2369LT1
MMBT2369ALT1
M1J, 1JA = Specific Device Code
X
= Date Code
ORDERING INFORMATION
Device
Package
Shipping
MMBT2369LT1
SOT–23 3000/Tape & Reel
MMBT2369ALT1 SOT–23 3000/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2002
1
May, 2002 – Rev. 3
Publication Order Number:
MMBT2369LT1/D
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