MJE2955T 데이터 시트보기 (PDF) - Inchange Semiconductor

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MJE2955T

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

MJE2955T

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;IB=0

-60

V

VCEsat-1 Collector-emitter saturation voltage IC=-4A ;IB=-0.4A

-1.1

V

VCEsat-2 Collector-emitter saturation voltage IC=-10A ;IB=-3.3A

-8.0

V

VBE

Base-emitter on voltage

IC=-4A ; VCE=-4V

-1.8

V

ICEO

Collector cut-off current

VCE=-30V; IB=0

-0.7 mA

ICEX

Collector cut-off current

ICBO

Collector cut-off current

VCE=-70V; VBE(off)=-1.5V

TC=150℃

VCB=-70V; IE=0

TC=150℃

-1.0

-5.0

mA

-1.0

-10

mA

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-5.0 mA

固IN电C半H导AN体GE SEMICONDUCTOR hFE-1

hFE-2

fT

DC current gain

DC current gain

Transition frequency

IC=-4A ; VCE=-4V

20

100

IC=-10A ; VCE=-4V

5.0

IC=-0.5A ; VCE=-10V

2.0

MHz

2

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