MGFC45V6472A(1998) 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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MGFC45V6472A Datasheet PDF : 2 Pages
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PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
27-March'98
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V6472A
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
TYPICAL CHARACTERISTICS (Ta=25deg.C)
P1dB ,GLP vs. f
47
12
VDS=10(V)
IDS=8(A)
P1dB
46
11
Po , PAE vs. Pin
50
50
VDS=10(V)
IDS=8(A)
Po
f=6.8(GHz)
45
40
45
10
GLP
44
9
43
8
42
7
6.3 6.4 6.5 6.6 6.7 6.8 6.9 7.0 7.1 7.2 7.3
FREQUENCY f(GHz)
40
30
35
20
PAE
30
10
25
0
20
25
30
35
40
45
INPUTPOWER Pin(dBm)
Po,IM3 vs.Pin
44
0
VDS=10(V)
IDS=8(A)
40 f=7.2(GHz)
Po
-10
Delta f=10(MHz)
36
-20
32
-30
28
-40
IM3
24
-50
20
-60
16
-70
18 20 22 24 26 28 30 32 34 36
INPUT POWER Pin (dBm S.C.L.)
S PARAMETERS (Ta=25deg.C,VDS=10V,ID=8.0A)
S Parameters (TYP.)
f
S11
S21
(GHz)
6.4
6.5
6.6
6.7
6.8
6.9
7.0
7.1
7.2
Magn.
0.66
0.61
0.56
0.50
0.43
0.35
0.24
0.15
0.01
Angle(deg.)
100
84
70
57
42
27
12
1
-10
Magn.
2.39
2.43
2.47
2.54
2.59
2.66
2.73
2.75
2.72
Angle(deg.)
-106
-122
-138
-154
-170
173
155
143
123
Magn.
0.057
0.065
0.071
0.079
0.088
0.095
0.101
0.105
0.109
S12
Angle(deg.)
-171
174
160
145
131
116
100
88
70
Magn.
0.32
0.34
0.35
0.35
0.34
0.31
0.27
0.24
0.20
S22
Angle(deg.)
74
64
52
40
27
12
-8
-27
-61
MITSUBISHI
ELECTRIC
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