MC78LC50HT1 데이터 시트보기 (PDF) - ON Semiconductor
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MC78LC50HT1 Datasheet PDF : 12 Pages
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MC78LC00 Series
ELECTRICAL CHARACTERISTICS (Vin = Vout(nom.) + 1.0 V, Cin = 1.0 mF, Cout = 1.0 mF, TJ = 25°C, unless otherwise noted.) (Note 5)
NTR SUFFIX
Characteristic
Output Voltage (TA = 25°C, Iout = 1.0 mA)
1.5 V
1.8 V
2.5 V
2.7 V
2.8 V
3.0 V
3.3 V
4.0 V
5.0 V
Symbol
Min
Typ
Max
Unit
Vout
V
1.455
1.5
1.545
1.746
1.8
1.854
2.425
2.5
2.575
2.646
2.7
2.754
2.744
2.8
2.856
2.94
3.0
3.06
3.234
3.3
3.366
3.9
4.0
4.1
4.90
5.0
5.10
Output Voltage (TA = −40°C to 85°C)
1.5 V
1.8 V
2.5 V
2.7 V
2.8 V
3.0 V
3.3 V
4.0 V
5.0 V
Vout
V
1.455
1.5
1.545
1.746
1.8
1.854
2.425
2.5
2.575
2.619
2.7
2.781
2.716
2.8
2.884
2.910
3.0
3.09
3.201
3.3
3.399
3.9
4.0
4.1
4.90
5.0
5.10
Line Regulation (Vin = VO(nom.) + 1.0 V to 12 V, Iout = 1.0 mA)
Load Regulation (Iout = 1.0 mA to 10 mA)
Output Current (Note 6)
1.5 V, 1.8 V (Vin = 4.0 V)
2.5 V, 2.7 V, 2.8 V, 3.0 V (Vin = 5.0 V)
3.3 V (Vin = 6.0 V)
4.0 V (Vin = 7.0 V)
5.0 V (Vin = 8.0 V)
Dropout Voltage (Iout = 1.0 mA, Measured at Vout −3.0%)
1.5 V
1.6 V−3.2 V
3.3 V−3.9 V
4.0 V−5.0 V
Regline
−
Regload
−
Iout
35
50
50
80
80
Vin−Vout
−
−
−
−
0.05
40
50
80
80
80
100
35
30
30
30
0.2
%/V
60
mV
mA
−
−
−
−
−
mV
70
60
53
38
Quiescent Current (Iout = 1.0 mA to IO(nom.))
IQ
−
1.1
3.6
mA
Output Voltage Temperature Coefficient
Tc
−
"100
−
ppm/°C
Output Noise Voltage (f = 1.0 kHz to 100 kHz)
Vn
−
89
−
mVrms
1. This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL−STD−883, Method 3015
Machine Model Method 200 V
2. Latch up capability (85°C) "100 mA
3. Maximum package power dissipation limits must be observed.
PD
+
TJ(max) *
RqJA
TA
4. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
5. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
6. Output Current is measured when Vout = VO1 − 3% where VO1 = Vout at Iout = 0 mA.
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